SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce a variation of a characteristic of a semiconductor device having an n-type MIS transistor. SOLUTION: A memory n-type MIS transistor QM1 formed in a memory region RM on a silicon substrate 1 has a memory source-drain region SD1 including a memory extension regions LD1 formed below both side walls of a memory gate electrode GE1. A logic n-type MIS transistor QL1 formed in the logic region RL has a logic source-drain region SD2 including logic extension regions LD2 formed below both side walls of the logic gate electrode GE2. The atomic weight of the n-type impurity of the memory extension region LD1 is smaller than the atomic weight of the n-type impurity of the logic extension region LD2. The memory n-type MIS transistor QM1 has a channel area smaller than that of the logic n-type MIS transistor QL1. COPYRIGHT: (C)2011,JPO&INPIT