| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode capable of improving withstand voltage. SOLUTION: This Schottky barrier diode 10 includes a substrate, a GaN layer 3 formed on the substrate, and a Schottky electrode 4 formed in contact with a surface of the GaN layer 3. The Schottky electrode 4 is formed of a base metal and has oxygen concentration≥4×10<SP>19</SP>cm<SP>-3</SP>. Preferably in the Schottky barrier diode 10, peak concentration of carbon in the interface between the GaN layer 3 and the Schottky electrode 4 is≥1×10<SP>19</SP>cm<SP>-3</SP>. COPYRIGHT: (C)2011,JPO&INPIT |
