发明名称 |
FLASH MEMORY DEVICE AND RELATED PROGRAMMING METHOD |
摘要 |
A nonvolatile memory device comprises a memory cell array configured to store one or more bits per memory cell, a read and write circuit configured to access the memory cell array, a control logic component configured to control the read and write circuit to sequentially execute read operations of a selected memory cell at least twice to output a read data symbol, and an error correcting unit configured to correct an error in the read data symbol based on a pattern of the read data symbol to output an error-corrected symbol.
|
申请公布号 |
US2011093765(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20100769692 |
申请日期 |
2010.04.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KI JUN;SON HONG RAK;KONG JUN JIN |
分类号 |
G11C16/06;G06F11/10;H03M13/05;H03M13/19;H03M13/45 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|