发明名称 Nonvolatile memory device, operating method thereof, and memory system including the same
摘要 A nonvolatile memory device includes a memory cell array; a voltage generator configured to provide stepwise increasing step pulses for varying logic states of memory cells in the memory cell array; and control logic configured to adjust an initial voltage of the stepwise increasing step pulses according to the number of the stepwise increasing step pulses.
申请公布号 US7929350(B2) 申请公布日期 2011.04.19
申请号 US20090542882 申请日期 2009.08.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG SANGWON
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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