发明名称 |
Nonvolatile memory device, operating method thereof, and memory system including the same |
摘要 |
A nonvolatile memory device includes a memory cell array; a voltage generator configured to provide stepwise increasing step pulses for varying logic states of memory cells in the memory cell array; and control logic configured to adjust an initial voltage of the stepwise increasing step pulses according to the number of the stepwise increasing step pulses.
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申请公布号 |
US7929350(B2) |
申请公布日期 |
2011.04.19 |
申请号 |
US20090542882 |
申请日期 |
2009.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SANGWON |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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