METHOD FOR MANUFACTURING NANOWIRE TRANSISTOR USING METAL THIN FILM AND NANOWIRE TRANSISTOR MANUFACTURED BY THE SAME

摘要

PURPOSE: A method for manufacturing a nano wire transistor using a metal thin film and the nano wire transistor manufactured by the same are prevent thermal deformation of a polymer based flexible substrate by using an annealing process at a low temperature. CONSTITUTION: A pair of metal electrodes are formed on a flexible substrate(S10). A low metal thin film with a lower melting point than the melting point of the metal electrode is deposited on the upper side of the metal electrode(S20). A nano wire is arranged between the metal electrodes and the metal thin films(S30). A flexible substrate is heated at a higher temperature than the melting point of the metal thin film(S40). The nano wire is bonded with the metal electrode(S50).