发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PURPOSE: A plasma processing apparatus is provided to implement the run-to-run control reflecting the process state of the apparatus by adding a process model representing the state variation of the process apparatus using the control loop. CONSTITUTION: A wafer(117) to be etched is transferred to a process chamber(100). A process monitor(102) monitors the state of the process chamber during the etching processing. A monitor value estimation unit(104) comprises a long-term variation model database(109) and a short-term variation model database(110). The monitor value estimation unit calculates the process estimation monitor value(105) using the measured monitor value(103). |
申请公布号 |
KR20110039167(A) |
申请公布日期 |
2011.04.15 |
申请号 |
KR20100007838 |
申请日期 |
2010.01.28 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
KAGOSHIMA AKIRA;SHIRAISHI DAISUKE;INOUE SATOMI;NAKAMOTO SHIGERU;IKUHARA SHOJI;MORISAWA TOSHIHIRO |
分类号 |
H01L21/3065;H01L21/66;H05H1/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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