| 摘要 |
A single-side implanting process for capacitors of stack DRAM is disclosed. Firstly, form a stacked structure with a dielectric layer and an insulating nitride layer on a semi-conductor substrate and etch the stacked structure to form a plurality of trenches. Then, form conductive metal plates respectively on an upper surface of the stacked structure and bottoms of the trenches, form a continuous conductive nitride film, form a continuous oxide film, and form a photo resist layer for covering the trenches which are provided for isolation. Then, form a plurality of implanted oxide areas on a single-side surface, remove the photo resist layer, remove the plurality of implanted oxide areas, remove the conductive metal plates and the conductive nitride film uncovered by the oxide film, and remove the oxide film and the dielectric film.
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