| 摘要 |
The detection circuit has a photodetector (1) connected to a read circuit (2), and a by-pass circuit (3) for by-passing a part of current from the photodetector. A polarizing transistor is connected between the photodetector and the read circuit. Another polarizing transistor (T1') is interposed between the photodetector and a by-pass node (A), where the by-pass circuit is connected to the by-pass node. A P-type metal oxide semiconductor transistor (T2) is connected to a supply line (VDD). |
