发明名称 |
Higher selectivity, method for passivating short circuit current paths in semiconductor devices |
摘要 |
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.
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申请公布号 |
US7923341(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20090455503 |
申请日期 |
2009.06.03 |
申请人 |
UNITED SOLAR OVONIC LLC |
发明人 |
DEMAGGIO GREG;FRITZSCHE HELLMUT;PIETKA GINGER |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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