| 摘要 |
A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1−x+δMx) (ZryTi1−y)O—  (P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05≦̸x≦̸0.4, and 0<y≦̸0.7, the standard composition being such that δ=0, and z=3.
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