发明名称 |
SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor with a low-resistance semiconductor crystal formed on a nonpolar surface. <P>SOLUTION: The semiconductor includes a substrate 101, and p-type layers 108 and 109 laminated on a principal surface of the substrate 101, wherein the substrate principal surface is nonpolar, the p-type layers 108 and 109 are each formed of at least one of a group-III nitride semiconductor and a group-II oxide semiconductor, and each upper surface of the p-type layers 108 and 109 includes a facet plane having a plane direction different from that of the substrate principal surface. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011071200(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20090219114 |
申请日期 |
2009.09.24 |
申请人 |
NEC CORP |
发明人 |
NANBAE KOICHI;MATSUDATE MITSUKI;OYA MASATERU;SHIBA KAZUHIRO |
分类号 |
H01S5/042;H01L21/205;H01L33/20 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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