| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device suppressing temperature rise in a processing chamber. SOLUTION: The plasma processing device 1 includes: a processing chamber 3 structured to introduce a material gas and allow an A.C. voltage to be applied; and a shower plate 5 for partitioning the inside of the processing chamber into a gas introduction chamber 32 for introducing the material gas therein, and a reaction chamber 31 for arranging a substrate 10 therein, wherein a cooling device 50 is arranged in the gas introduction chamber. COPYRIGHT: (C)2011,JPO&INPIT |
