| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element capable of suppressing an increase of a forward voltage while maintaining a light-emitting area. <P>SOLUTION: The light-emitting element 1 includes: a semiconductor laminate structure comprising a nitride compound semiconductor including a first-conductivity type semiconductor layer, a light-emitting layer 25, and a second-conductivity type semiconductor layer differing from a first conductivity type; a p-contact electrode 30 coming into ohmic contact with the second-conductivity type semiconductor layer; a second spot-like electrode coming into ohmic contact with the p-contact electrode 30; and a plurality of first spot-like electrodes that come into ohmic contact with the first-conductivity type semiconductor layer which are exposed by partially removing the second-conductivity type semiconductor layer and the light-emitting layer 25, and larger than the second electrodes in number. <P>COPYRIGHT: (C)2011,JPO&INPIT |
