发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a photoelectric conversion element with excellent characteristics, or to provide a semiconductor device including an optical sensor photoelectric conversion device with excellent characteristic through a simple process. <P>SOLUTION: The semiconductor device is provided, which includes: a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a semiconductor region performing a photoelectric conversion over the insulating layer. The photoelectric conversion element includes: a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011071491(A) 申请公布日期 2011.04.07
申请号 JP20100183920 申请日期 2010.08.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ISOBE ATSUO;HARIMA NORIKO;MATSUMOTO NORIKO;SHIMOMURA AKIHISA;NODA KOSEI;YAMAWAKI KAZUKO;KUROKAWA YOSHIMOTO;IKEDA TAKAYUKI;HAMADA TAKASHI
分类号 H01L31/10;H01L21/02;H01L21/20;H01L21/265;H01L21/322;H01L21/336;H01L21/76;H01L21/762;H01L21/8234;H01L27/06;H01L27/08;H01L27/12;H01L27/146;H01L29/786 主分类号 H01L31/10
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