发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a photoelectric conversion element with excellent characteristics, or to provide a semiconductor device including an optical sensor photoelectric conversion device with excellent characteristic through a simple process. <P>SOLUTION: The semiconductor device is provided, which includes: a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a semiconductor region performing a photoelectric conversion over the insulating layer. The photoelectric conversion element includes: a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011071491(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20100183920 |
申请日期 |
2010.08.19 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ISOBE ATSUO;HARIMA NORIKO;MATSUMOTO NORIKO;SHIMOMURA AKIHISA;NODA KOSEI;YAMAWAKI KAZUKO;KUROKAWA YOSHIMOTO;IKEDA TAKAYUKI;HAMADA TAKASHI |
分类号 |
H01L31/10;H01L21/02;H01L21/20;H01L21/265;H01L21/322;H01L21/336;H01L21/76;H01L21/762;H01L21/8234;H01L27/06;H01L27/08;H01L27/12;H01L27/146;H01L29/786 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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