FABRICATION METHOD OF PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A phase shift memory device manufacturing method is provided to improve the phase shift efficiency by maximizing the heat focusing effect by manufacturing the phase shift material in confined shape. CONSTITUTION: A lower electrode(103) is formed on a semiconductor substrate(101). An inter-layer insulating layer(105) is formed on the overall structure including the lower electrode. A lower electrode contact hole of the predetermined size is formed to expose the surface of the lower electrode. A spacer insulating layer is formed on the overall structure including the lower electrode contact hole.