| 摘要 |
PURPOSE: A test pattern of a semiconductor device and a manufacturing method thereof are provided to early detect a bunker defect of a bottom electrode contact by forming a metal contact to connect the test pattern to the bottom electrode pattern for monitoring. CONSTITUTION: A bottom electrode(360) is formed on a semiconductor substrate(300) including a bottom electrode contact plug. A dielectric layer(370) and a top electrode(400) are formed on the upper side of the bottom electrode. A metal contact(420) is connected to the bottom electrode and includes a metal contact area by etching the top electrode, a dielectric layer, and the bottom electrode. A test pattern is formed by laminating a metal wiring(430) and a second insulation layer(440) on the metal contact.
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