发明名称 |
Method of manufacturing semiconductor device including forming a t-shape gate electrode |
摘要 |
The present invention provides a method of manufacturing a semiconductor device, which comprises the steps of: forming a buffer layer formed of a dual-layer structure of a buffer oxide film and a buffer nitride film on a semiconductor substrate formed with a certain lower structure; forming source/drain by performing an ion injection process after forming the buffer layer; defining a gate hole by etching the buffer layer after forming the source/drain; forming a gate oxide film on the defined gate hole; forming a gate material to bury the defined gate hole; forming a T-shape gate electrode through a process of etching the gate material using the buffer nitride film as an etching stop film; and forming a contact hole after forming an inter-layer dielectric on a resulting structure formed with the T-shape gate electrode.
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申请公布号 |
US7919404(B2) |
申请公布日期 |
2011.04.05 |
申请号 |
US20080318390 |
申请日期 |
2008.12.29 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHOI MYOUNG KYU |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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