| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element for achieving a stable withstand voltage without performing neutron emission. SOLUTION: This semiconductor device includes: a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed from one-side surface of the first semiconductor region; a second conductivity type third semiconductor region formed to surround the second semiconductor region and extending from the one-side surface of the first semiconductor region; a first conductivity type fourth semiconductor region formed to surround the third semiconductor region and extending from the one-side surface of the first semiconductor region; a first conductivity type fifth semiconductor region extending to one-side main surface of the first semiconductor region without affecting the second, third and fourth semiconductor regions extending to the one-side main surface of the first conductivity type first semiconductor region; and a first conductivity type sixth semiconductor region extending from the other-side surface of the first semiconductor region. COPYRIGHT: (C)2011,JPO&INPIT |
