| 摘要 |
PROBLEM TO BE SOLVED: To attain a high-reliabilty semiconductor device which protects an element from a stress generated by a bonding process and a probing process and which does not generate cracks on an insulating film at the lower side of a bonding pad. SOLUTION: The semiconductor device is equipped with a semiconductor substrate, a first interlayer insulating film 3 formed on the semiconductor substrate, a pad 1 formed on the first interlayer insulating film 3 and a plurality of first wirings 12, formed independently in the first interlayer insulating film 3 with mutual interval therebetween in a region immediately below the pad 1. The plurality of first wirings 12 are provided in a region immediately below the pad 1, with a plurality of first direction wirings 12A extending in a first direction and a plurality of second direction wirings 12B that extends in a second direction orthogonal to the first direction. COPYRIGHT: (C)2011,JPO&INPIT
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