| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device and a method for manufacturing the same, which corresponds to a high heat dissipation type at a high loading rate of semiconductor elements by miniaturizing and reducing the thickness of a resin package as 4 external connection terminals having a length and breadth of ≤0.8 mm and a height of ≤0.3 mm, and by increasing a mounting rate (chip area/package occupation area) in mounting a semiconductor device substrate on which the die pad occupied area ratio is ≥30%. <P>SOLUTION: The resin-sealed semiconductor device has a projecting shape in one direction and a vertical surface shape sloping to inside of the direction of the external connection terminal in the other direction. An upset inner lead 5 having a bent part is provided with a cut-off part over the bent part and the external connection terminal 8, and is arranged almost in the central part of the die pad in parallel to the vertical surface shape sloping to the side of the die pad, in which a thin part of the side surface part and the exposed part of the bottom surface are disposed, with the height of the upper surface of the inner lead being higher than the upper surface of the semiconductor element. <P>COPYRIGHT: (C)2011,JPO&INPIT |
