发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second select transistor provided between the other end of the memory string and the source line; and a control circuit configured to control a read operation. A plurality of the memory strings connected to one bit line via a plurality of the first select transistors. During reading of data from a selected one of the memory strings, the control circuit renders conductive the first select transistor connected to an unselected one of the memory strings and renders non-conductive the second select transistor connected to unselected one of the memory strings.
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申请公布号 |
US2011075481(A1) |
申请公布日期 |
2011.03.31 |
申请号 |
US20100694677 |
申请日期 |
2010.01.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI;KATSUMATA RYOTA;KITO MASARU;KIDOH MASARU;TANAKA HIROYASU;FUJIWARA TOMOKO;ISHIDUKI MEGUMI;KOMORI YOSUKE;MIKAJIRI YOSHIMASA;OOTA SHIGETO;KIRISAWA RYOUHEI;AOCHI HIDEAKI |
分类号 |
G11C16/04;G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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