METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for forming a fine pattern in a semiconductor device, using a double exposure patterning process capable of forming a 2nd photoresist pattern by a simple exposure without using an exposure mask. The method for forming a fine pattern in a semiconductor device comprises: forming a 1st photoresist pattern on a semiconductor substrate having a layer to be etched formed thereon; heating (bake-hardening) the 1st photoresist pattern at 110 to 220 degrees Celsius to form an interlayer mirror film; forming a 2nd photoresist film on the resultant; and performing exposure and developing processes on the 2nd photoresist film without using an exposure mask but using light (low-energy light) having an energy value lower than a threshold energy (Eth) of the 2nd photoresist film, thereby forming a 2nd photoresist pattern between the 1st photoresist patterns by diffused reflection of the interlayer mirror film.