发明名称 METHOD OF POLISHING SUBSTRATE
摘要 PURPOSE: A method of polishing a substrate is provided to remove an oxide film from the surface of a wafer by using a stock pad and final slurry in polishing. CONSTITUTION: In a method of polishing a substrate, stock grinding is performed to make the surface of a wafer even(S2). Final grinding is performed by making the surface of the wafer smooth(S3). The wafer is polished firstly using a first smooth polish pad and colloidal slurry containing a polymer(S31). The polished wafer is polished secondly by using a second polish pad that is smoother than the first polish pad(S32).
申请公布号 KR20110032545(A) 申请公布日期 2011.03.30
申请号 KR20090090089 申请日期 2009.09.23
申请人 LG SILTRON INCORPORATED 发明人 AHN, JIN WOO;CHOI, EUN SUCK;YU, HWAN SU;MOON, JI HUN;KIM, BONG WOO
分类号 H01L21/304 主分类号 H01L21/304
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