发明名称 |
METHOD OF POLISHING SUBSTRATE |
摘要 |
PURPOSE: A method of polishing a substrate is provided to remove an oxide film from the surface of a wafer by using a stock pad and final slurry in polishing. CONSTITUTION: In a method of polishing a substrate, stock grinding is performed to make the surface of a wafer even(S2). Final grinding is performed by making the surface of the wafer smooth(S3). The wafer is polished firstly using a first smooth polish pad and colloidal slurry containing a polymer(S31). The polished wafer is polished secondly by using a second polish pad that is smoother than the first polish pad(S32). |
申请公布号 |
KR20110032545(A) |
申请公布日期 |
2011.03.30 |
申请号 |
KR20090090089 |
申请日期 |
2009.09.23 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
AHN, JIN WOO;CHOI, EUN SUCK;YU, HWAN SU;MOON, JI HUN;KIM, BONG WOO |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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