| 摘要 |
A microbolometer pixel and a reduced-step process for manufacturing it comprising the step of ion implantation of vanadium oxide whereby VOx is converted to a low resistivity mixed phase vanadium oxide (VOx/V2O3/VO/V) in the leg, metallized support post, and detector contact areas. Masking maintains high temperature coefficient of resistance (TCR) VOx in the sensing portion of the pixel bridge region. The implanted area resistivity and TCR can be controlled by ion implantation dose and energy.
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