FILM-FORMING METHOD AND STORAGE MEDIUM

摘要

Disclosed is a film-forming method which comprises: a step in which a substrate is prepared by forming a Co film as a seed layer on the surface of the substrate; a step in which negative voltage is applied to the substrate in such a way that the surface potential of the Co becomes less than the oxidation potential of the Co; and a step in which a Cu film is formed on the Co film of the substrate by means of electrolytic plating, the Co film being immersed in a plating solution which is primarily copper sulfate solution while the negative voltage is still being applied to the substrate.