发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>A sense amplifier (SA11) outputs read data corresponding to the voltage difference between a first main bit line (MBL11) and a second main bit line (RBL11). A voltage supply switching unit (101) supplies a reference voltage (VREF) to the first main bit line (MBL11) that corresponds to the second main bit line (RBL11), which generates a current corresponding to the threshold voltage of a second memory cell (RC11). A resistance switching unit (102) electrically connects the second main bit line (RBL11), which generates the current corresponding to the threshold voltage of the second memory cell (RC11), and a ground node at a prescribed resistance.</p>
申请公布号 WO2011033701(A1) 申请公布日期 2011.03.24
申请号 WO2010JP03398 申请日期 2010.05.20
申请人 PANASONIC CORPORATION;OZEKI, TAKAO 发明人 OZEKI, TAKAO
分类号 G11C16/06 主分类号 G11C16/06
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