发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE-PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve embedding properties to a recessed part of a groove, while lowering the film formation temperature of an oxide film. SOLUTION: A method includes: a process for carrying a substrate into a processing chamber; a process for supplying a film formation raw material, an oxidation raw material and a catalyst raw material simultaneously into the processing chamber; a process for suspending supply of each raw material for purge the inside of the processing chamber with an inert gas; a process for accumulating the oxide film on a substrate by carrying out the above process one time or a plurality of times; and a process for carrying the substrate, after accumulating the oxide film out of the processing chamber. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011061007(A) 申请公布日期 2011.03.24
申请号 JP20090209143 申请日期 2009.09.10
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MIYA HIRONOBU;HORII SADAYOSHI
分类号 H01L21/31;C23C16/40 主分类号 H01L21/31
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