| 摘要 |
Example embodiment is provided to a method for manufacturing a semiconductor device, including forming a hard mask layer on a buried bit line and forming a storage node contact hole by using the selectivity between an interlayer insulating layer and the hard mask layer, thereby forming a contact hole using a mask of a line pattern instead of a hole pattern. Accordingly, a mask for the contact hole can be easily fabricated and the contact area can be maximized, thereby reducing the contact resistance.
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