| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing variations of the threshold voltage of a transistor formed on a semiconductor layer on an insulating layer. SOLUTION: The semiconductor device includes a substrate composed of the insulating layer and the semiconductor layer formed thereon, and the transistor formed on the semiconductor layer. The transistor has a gate electrode formed on the semiconductor layer via a gate insulating film, a source or drain formed on the semiconductor layer under both sides of the gate electrode, and an input terminal and an output terminal for flowing current through the semiconductor layer underneath the gate electrode along the gate width direction of the transistor. COPYRIGHT: (C)2011,JPO&INPIT
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