| 摘要 |
A ferroelectric capacitor (42) is formed over a semiconductor substrate (10), and thereafter, a barrier film (46) directly covering the ferroelectric capacitor (42) is formed. Then, an interlayer insulating film (48) is formed and flattened. Then, an inclined groove is formed in the interlayer insulating film (48), and a barrier film (50) is formed over the entire surface.
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