发明名称 |
LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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申请公布号 |
US2011062434(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100880269 |
申请日期 |
2010.09.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
EGUCHI SHINGO;OIKAWA YOSHIAKI;OKAZAKI KENICHI;MARUYAMA HOTAKA |
分类号 |
H01L29/22;H01L33/02 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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