发明名称 |
High-Quality Hetero-Epitaxy by Using Nano-Scale Epitaxy Technology |
摘要 |
An integrated circuit structure includes a semiconductor substrate formed of a first semiconductor material; two insulators in the semiconductor substrate; and a semiconductor region between and adjoining sidewalls of the two insulators. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material, and has a width less than about 50 nm.
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申请公布号 |
US2011062492(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100831852 |
申请日期 |
2010.07.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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