| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistance change memory device with a write control circuit which enables stable data state transition. <P>SOLUTION: The device has: a cell array with memory cells which is arranged therein and stores a resistance state as data in a non-volatile manner; a write buffer configured to supply voltage and current to a selected memory cell in the cell array in accordance with data to be written in it; and the write control circuit configured to make part of current supplied to the selected memory cell from the write buffer flow out in accordance with the state change of the selected memory cell in a write mode. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
