发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To solve the problem that, in a manufacturing process for a semiconductor wafer wherein only an element forming part is made thinner and an initial thickness of a semiconductor substrate is left in the peripheral part, a thick peripheral part remains in a final process, so that a conventional dicing device for dividing a semiconductor chip of the element forming part cannot be used, and that a new equipment investment is required. SOLUTION: The element forming part and its periphery of the semiconductor substrate are ground to a first thickness, and the initial thickness is left in the initial peripheral part of the outermost periphery. Only the element forming part is ground to a second thickness, and a first peripheral part with small step is formed around the element forming part. After forming a metal layer on a rear surface, the initial peripheral part is ground to the thickness which is thicker than the first peripheral part and makes a smaller step therefrom, to form a second peripheral part. The element forming part and the peripheral part can be separated from each other by the existing dicing device, and the element forming part and the peripheral part can make a gradual step form. Thereby adhesiveness of a dicing tape can be improved between the element forming part and the peripheral part. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011054914(A) 申请公布日期 2011.03.17
申请号 JP20090205199 申请日期 2009.09.04
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 OKADA KIKUO;KURAMOCHI TAKASHI
分类号 H01L21/301;H01L21/304 主分类号 H01L21/301
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