| 摘要 |
<p>Provided are a method for manufacturing a field-effect transistor by which an active layer can be protected from an etchant without being exposed to an air atmosphere, and a device for manufacturing same. A method for manufacturing a field-effect transistor comprises a step of forming an active layer (15) (IGZO film (15F)) of In-Ga-Zn-O based composition on a base material (10) by a sputtering method, a step of forming, on the active layer, a stopper layer (16) (stopper layer forming film (16F)) for protecting the active layer from an etchant for the active layer by the sputtering method, and a step of etching the active layer with the stopper layer as a mask. By depositing the stopper layer by the sputtering method, the stopper layer can be formed without exposing the active layer to the air after the active layer is deposited. Consequently, film quality degradation caused by the adhesion of water and impurities in the air to the surface of the active layer can be prevented.</p> |
