发明名称 SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
摘要 A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.
申请公布号 EP2208229(A4) 申请公布日期 2011.03.16
申请号 EP20080831427 申请日期 2008.09.19
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 YEDINAK, JOSEPH, A.;LEE, JAEGIL;JANG, HOCHEOL;YUN, CHONGMAN;SHENOY, PRAVEEN MURALEEDHARAN;REXER, CHRISTOPHER, L.;KIM, CHANGWOOK;LEE, JONGHUN;HIGGS, JASON, M.;REICHL, DWAYNE, S.;SHARP, JOELLE;WANG, QI;KIM, YONGSUB;LEE, JUNGKIL;RINEHIMER, MARK, L.;JUNG, JINYOUNG;KIM, YONGSUB
分类号 H01L29/00 主分类号 H01L29/00
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