发明名称 Polysilicon structures resistant to laser anneal lightpipe waveguide effects
摘要 Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements.
申请公布号 US7906405(B2) 申请公布日期 2011.03.15
申请号 US20080047702 申请日期 2008.03.13
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MCPHERSON JOE W.;SHANWARE AJIT
分类号 H01L21/20 主分类号 H01L21/20
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