In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes.
申请公布号
US7906398(B2)
申请公布日期
2011.03.15
申请号
US20080336487
申请日期
2008.12.16
申请人
HYNIX SEMICONDUCTOR INC.
发明人
PARK SANG-HOON;CHO YUN-SEOK;CHO SANG-HOON;LEE CHUN-HEE