| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein, in a conventional semiconductor device, it becomes difficult to form a normal contact and a shared contact at the same time, and a junction leak failure and increase of contact resistance occur, and the like. SOLUTION: This semiconductor device includes: a sidewall 9 formed on a sidewall of a gate wire 6 of a logic SRAM part; a doped polysilicon 18 for electrically connecting a silicide layer 13 formed on a surface of a diffusion layer 11 to a silicide layer 15 of the gate wire 6; a W plug 26 for electrically connecting the doped polysilicon 18 to a first layer aluminum wire; and a W plug 25 for electrically connecting the silicide layer on the surface of the diffusion layer 11 of the logic SRAM part to the first layer aluminum wire. COPYRIGHT: (C)2011,JPO&INPIT |
