| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric converter with which power generation efficiency is improved by suppressing a rise in substrate temperature during filming even when filming a crystalline silicon photoelectric conversion layer on a large-area substrate. <P>SOLUTION: The method of manufacturing a photoelectric converter includes an i-layer filming step in which a crystalline silicon i-layer is filmed on a p-layer or an n-layer filmed beforehand on a substrate 1 by a vacuum treatment device for filming a photoelectric conversion layer including the p-layer, the n-layer and the crystalline silicon i-layer by using plasma. The vacuum treatment device comprises a substrate table 204 for heating the substrate and a discharging electrode 203 for forming the plasma. The i-layer filming step includes a step for controlling so that a setting temperature at filming end becomes lower than a setting temperature at substrate introduction, wherein a setting temperature profile of at least either the substrate table or the discharging electrode includes the setting temperature at substrate introduction at a time when the substrate 1 is introduced into the vacuum treatment device, and the setting temperature at filming end at a time when plasma is lighted off inside the vacuum treatment device. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
