| 摘要 |
<p>PURPOSE: A semiconductor device is provided to form a plurality of material films with a sidewall thicker than a flat part to increase a margin of a contact process, thereby increasing reliability of a semiconductor device. CONSTITUTION: A substrate(100) comprises a concave part(A) with a floor side(106) and a side(108) and a ridge(B) expanded from the side. A plurality of material films comprises flat parts(111a,113a,115a,117a) on the floor side and sidewall parts(111b,113b,115b,117b) expanded from the side. The thicknesses of the sidewall parts of the material layers are thicker than the thickness of the flat parts of the material films. A gate pattern comprises a gate pattern flat part and a gate pattern sidewall part. A conductive pattern(162) is placed on upper sides of gate pattern sidewall parts.</p> |
