SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the area of an active region by including an active pattern on both sidewall of a trench. CONSTITUTION: A trench(25) is formed on a substrate(21). A first device isolation layer(27A) partially fills the trench. An active pattern(28) is formed on both sidewalls of the trench on the first device isolation layer. A protection layer(29A) is interposed between the second device isolation layer and the active pattern.