METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to suppress a leakage current by minimizing a defective region of a substrate by controlling thermal stress applied between silicon and an insulation layer. CONSTITUTION: A pad nitride layer(13) and a pad oxide layer(12) are formed on a substrate(11). A trench is formed by etching the substrate. A liner nitride layer(19) is formed along the step of the bottom and sidewall of the trench. A buffer layer(20A) is formed on the liner nitride layer. A movable insulation layer(21) for filling the trench is formed on the buffer layer.