发明名称 MULTIFERROIC STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A multiferroic structure and a method for manufacturing the same are provided to omit a buffer layer by eliminating the shrinkage difference of a ferroelectric layer and a ferromagnetic layer. CONSTITUTION: A ferroelectric(2) is one or more selected from a group including K_1-xNa_xNbO_3 ceramics, K_1-xNa_xNbO_3 ceramics, Li_x(K_0.5Na_0.5)_1-xNb_1-ySb_yO_3, and Ag_x(K_0.5Na_0.5)_1-xNbO_3. A ferromagnetic(3) is one or more selected from a group including NiFe_2O_4 ferrite, Ni_1-xZn_xFe_2O_4 ferrite, Co_1-xZn_xFe_2O_4 ferrite, and CoFe_2O_4 ferrite. A ferroelectric layer and a ferromagnetic layer are alternately stacked to form a multiferroic structure(1).
申请公布号 KR20110023056(A) 申请公布日期 2011.03.08
申请号 KR20090080650 申请日期 2009.08.28
申请人 KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY 发明人 NAM, JOONG HEE;KIM, JUN HEE;KIM, KEE HOON;LIM, SOON HO;CHO, JEONG HO;CHUN, MYOUNG PYO;KIM, BYUNG IK
分类号 B32B9/00;B32B18/00;H01B3/12;H01L27/10 主分类号 B32B9/00
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