发明名称 |
WRITE OPERATION FOR SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH REDUCED BIT CELL SIZE |
摘要 |
Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by arranging the source lines (SL) substantially in parallel with the word lines (WL) and substantially perpendicular to the bit lines (BL). Further, in one embodiment during a write operation, a high logic/voltage level is applied to the bit lines of unselected bit cells to prevent an invalid write operation. |
申请公布号 |
KR20110022088(A) |
申请公布日期 |
2011.03.04 |
申请号 |
KR20117002011 |
申请日期 |
2009.06.19 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
JUNG, SEONG OOK;SANI MEHDI HAMIDI;KANG, SEUNG H.;YOON, SEI SEUNG |
分类号 |
G11C11/15;G11C7/18 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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