发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD |
摘要 |
Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
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申请公布号 |
US2011053382(A1) |
申请公布日期 |
2011.03.03 |
申请号 |
US20100868089 |
申请日期 |
2010.08.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YANAGISAWA YOSHIHIKO;TANABE MITSURO;SAKUMA HARUNOBU;TAKASAKI TADASHI |
分类号 |
H01L21/18;C23C16/56 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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