| 摘要 |
Damaged surfaces of a low k carbon-containing silicon oxide dielectric material are treated with one or more carbon-containing gases, and in the absence of an oxidizing agent, to inhibit subsequent formation of silicon-hydroxyl bonds when the damaged surfaces of the low k dielectric material are thereafter exposed to moisture. The carbon-containing gas treatment of the invention is carried out after the step of oxidizing or "ashing" the resist mask to remove the mask, but prior to exposure of the damaged surfaces of the low k dielectric material to moisture. Optionally, the carbon-containing gas treatment may also be carried out after the initial step of etching the low k carbon-containing silicon oxide dielectric material to form vias or contact openings as well, particularly when exposure of the damaged surfaces of the low k dielectric material to moisture after the via etching step and prior to the resist removing oxidation step is possible. The treatment of the damaged low k carbon-containing silicon oxide dielectric material with a carbon-containing gas may be carried out with or without the assistance of a plasma, but preferably will be carried out in the presence of a plasma. An N2 densification step may also be carried out after the via etch step and optional carbon-containing gas treatment, but prior to the resist removal oxidation step.
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