发明名称 CURRENT REFERENCE CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a current reference circuit which occupies a small area on a semiconductor wafer, requires less power consumption and has low supply voltage dependency. <P>SOLUTION: The current reference circuit having low temperature dependency is disclosed. The current reference circuit includes a proportional-to-absolute temperature current generator, a band-gap reference circuit and a current replication circuit. The proportional-to-absolute temperature current generator generates a proportional-to-absolute temperature current IPTAT. The band-gap reference circuit generates a reference voltage based on the proportional-to-absolute temperature current and generates a second current IPTC having a positive (+) temperature coefficient by canceling a first current IZTC having a zero temperature coefficient with the proportional-to-absolute temperature current. The current replication circuit replicates the first current IZTC based on the proportional-to-absolute temperature current and the second current IPTC. Then, the current reference circuit occupies a small area on the wafer, requires less power consumption and has low supply voltage dependency. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011044142(A) 申请公布日期 2011.03.03
申请号 JP20100182291 申请日期 2010.08.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM HYOUNG-RAE
分类号 G05F3/24;G05F3/26 主分类号 G05F3/24
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