| 摘要 |
PROBLEM TO BE SOLVED: To rapidly, inexpensively and easily grow an epitaxial thin film on a textured substrate. SOLUTION: By using a combustion chemical vapor deposition method (CCVD) or the like, a perovskite type dielectric layer is formed on a textured substrate. A precursor substance supplied to a supply end 102 of a CCVD device 100 reacts with oxygen supplied from another supply port 106 to deposit a product on the substrate S. As a dielectric material in a capacitor, a MgO single-crystal substrate is used, SrTiO<SB>3</SB>is formed using an organic metal compound as a precursor substance, and a BaSrTiO<SB>3</SB>formation technique or the like is provided. COPYRIGHT: (C)2011,JPO&INPIT
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