SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE

摘要

Disclosed is a semiconductor device that can decrease leakage current regardless of the surrounding temperature. Further disclosed is an active matrix substrate utilizing same, and a display device. A switching unit (semiconductor device) (18) having a plurality of thin film transistors connected in series is provided with a plurality of gate electrodes (g1-g4); a channel region (30) and a low impurity concentration region (29) provided to each of the plurality of transistors and contained in a silicon layer (semiconductor layer) (SL) provided below the plurality of gate electrodes (g1-g4); and a bottom gate electrode (21) provided below the silicon layer (SL). Signals are supplied to the bottom gate electrode (29) in phase with those of each gate electrode (g1-g4).